c/ , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor TIP514 description ? continuous collector current-lc= -5a ? collector-emitter breakdown voltage- :v(br)ceo=-150v(min.) ? collector power dissipation- :pc=20w@tcs= 1001c applications ? designed for power amplifier and high speed switching applications. absolute maximum ratings(ta=25c) symbol vcbo vceo vebq ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @ta= 25 'c collector power dissipation @tc^100'c junction temperature storage temperature value -150 -150 -5 -5 -7.5 -2 2 20 200 -65-200 unit v v v a a a w r 'c thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 5.0 unit "c/w ?^ 2 pin 1.base 2. emitter 3 collect or (case) to-66 package t i- ? l t-e i ? fj ? h 1 i -*4u-d v- i-l-* vh t v dim a b c d e 6 h k ^ l h q u v t^^x^ c ipl r / j t -bb i t -3-?^ g b ^__/ -oa 1 111! 11 mm 31,40 17.30 6.70 0.70 1.40 max 31.80 17.70 7.10 0.90 1.60 5,08 1 2.m 9.so 1:4.70 12.40 j.bo 24.30 3,50 10..20 14.90 12.60 3.ao 24.50 3.70 f 1 quality semi-conductors
silicon npn power transistor TIP514 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat)-i vce(sat)-2 vee(on) iceo ices iebo hpe-1 hfe-2 parameter collector-emitter breakdown voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain conditions lc= -30ma; ib= 0 lc= -2.5a; ib= -0.25a lc= -5a; ib= -0.5a lc= -5a; vce= -4v vce= -75v; ib= 0 vce=-150v;vbe=0 vce= -75v; vae= 0, tc=150'c veb= -2.5v; lc= 0 veb= -5v; lc= 0 lc= -2.5a; vce= -4v lc= -5a; vce= -4v min -150 30 15 max -1.0 -2.0 -2.2 -0.3 -1.0 -2.0 -0.1 -1.0 150 unit v v v v ma ma ma
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